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CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film

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CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film

Packaging Details : wooden case packing

Supply Ability : 30 Piece/Pieces per Quarter

Price : USD12,000-100,000/SET

Brand Name : Jingtan

Certification : CE

MOQ : 1 set

Delivery Time : 60 days

Payment Terms : L/C/T/T

place of origin : Hunan, China

type : Induction Furnace

usage : deposition furnace

video outgoing-inspection : Provided

machinery test report : Provided

core components : PLC

brand name : Jingtan

voltage : 380

weight (t) : 2 T

power (kw) : 220

key selling points : Competitive Price

Design Temperature (℃) : 1250-2200

Woring temperature : 900-1200℃

Pressure rise rate (Pa/h) : 0.67Pa/h(150Pa/24h)

Heating method : Resistance/induction

Working atmosphere : vacuum/CH4/C3H6/H2/N2/Ar

Furnace type : Square/roundVertical/Horizontal

Furnace cooling mode : furnace shell water cooling

Infrared instrument : single/double colorimetric

Temperature uniformity : ±5

Limit vacuum Degree(Pa) : 1-100

Marketing Type : Ordinary Product

Warranty of core components : 1 Year

Applicable Industries : Other, semiconductor

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Specification:
Vacuum deposition furnace:
Mainly used for the preparation of carbon-carbon composite materials, and the deposition furnace is mainly used for the preparation of pyrolytic carbon coating on the surface of graphite, semiconductor devices and heat-resistant scour materials.
Parameter /Model No.
JT-0305-C
JT-0505-C
JT-0608-C
JT-0608-C
JT-0812-C
JT-1120-C
JT-1218-C
JT-1520-C
Working Zone Size
φ×H(mm)
300×500
500×500
600×800
600×1200
800×1200
1100×2000
1200×1800
1500×2000
Highest Temperature
(℃)
2300
2300
2300
2300
2300
2300
2300
2300
Temperature uniformity(℃)
±5
±5
±5/±7.5
±7.5/±10
±7.5/±10
±10/±15
±10/±15
±15/±20
Limit Vacuum Degree(Pa)
1-100
1-100
1-100
1-100
1-100
1-100
1-100
1-100
Limit Vacuum Degree(Pa)
0.67
0.67
0.67
0.67
0.67
0.67
0.67
0.67
Heating method
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film
Design temperature
1250℃/1650℃/1800℃/2200℃
Common temperature
900~1200℃
Vacuum degree
< 50Pa
Pressure rise rate
6.67pA /h(or 150Pa/24h) in cold state of empty furnace
Heating mode
graphite resistance heating or induction heating, independent temperature control, good temperature uniformity
Atmosphere medium
vacuum /CH4/C3H6/H2/N2/Ar
CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film
Gas control mode
mass flow meter control, multi-channel gas path, uniform flow field, no deposition dead Angle, good deposition effect;Multi-stage and efficient exhaust treatment system, environmentally friendly, easy to clean up
Furnace type
square, round, vertical or horizontal structure (non-standard design), fully enclosed deposition chamber, good sealing effect,
strong anti-pollution ability;
Furnace cooling mode
furnace shell water cooling, external circulation quick cooling system can be selected, short cooling time, high production
efficiency;
CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film
Structure form
horizontal - side discharge, vertical - up/down discharge
Locking mode
manual/automatic
Shell material
inner stainless steel/all stainless steel
Insulation material
carbon felt/graphite felt/carbon fiber cured felt
Infrared instrument
single colorimetric/double colorimetric
Power supply
KGPS/IGBT(only suitable for medium frequency heating)
Product parameter:

Product Tags:

Deposition Equipment For Semiconductor Material

      

CVD Furnace For Semiconductor Material

      
Quality CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film for sale

CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film Images

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