The Vacuum deposition furnace is used for the preparation of carbon-carbon composite materials, and the deposition furnace is mainly used for the preparation of pyrolytic carbon coating on the surface of graphite, semiconductor devices and heat-resistant scour materials.
Scope of application:
Graphite, semiconductor devices, heat-resistant scour materials.
1. Basic Parameters:
1) Design temperature: 1250℃/1650℃/1800℃/2200℃
2) Common temperature: 900~1200℃
3) Vacuum degree: < 50Pa
4) Pressure rise rate: 6.67pA /h(or 150Pa/24h) in cold state of empty furnace
5) Heating mode: graphite resistance heating or induction heating, independent temperature control, good temperature uniformity
6) Atmosphere medium: vacuum /CH4/C3H6/H2/N2/Ar
7) Gas control mode: mass flow meter control, multi-channel gas path, uniform flow field, no deposition dead Angle, good deposition effect;
Multi-stage and efficient exhaust treatment system, environmentally friendly, easy to clean up;
8) Furnace type: square, round, vertical or horizontal structure (non-standard design), fully enclosed deposition chamber, good sealing effect, strong anti-pollution ability;
9) Furnace cooling mode: furnace shell water cooling, external circulation quick cooling system can be selected, short cooling time, high production efficiency;
2. Structure of vacuum deposition furnace:
Structure form: horizontal - side discharge, vertical - up/down discharge
Furnace door locking mode: manual/automatic
Furnace shell material: inner stainless steel/all stainless steel
Insulation material: carbon felt/graphite felt/carbon fiber cured felt
Heater, muffle material: graphite /CFC
Infrared instrument: single colorimetric/double colorimetric
Power supply: KGPS/IGBT(only suitable for medium frequency heating)
Produce Specification:
| Parameter /Model No. | JT-0305-C | JT-0505-C | JT-0608-C | JT-0612-C | JT-0812-C | JT-1120-C | JT-1218-C | JT-1520-C |
| Working Zone Size φ×H(mm) | 300×500 | 500×500 | 600×800 | 600×1200 | 800×1200 | 1100×2000 | 1200×1800 | 1500×2000 |
| Highest Temperature (℃) | 2300 | 2300 | 2300 | 2300 | 2300 | 2300 | 2300 | 2300 |
| Temperature uniformity(℃) | ±5 | ±5 | ±5/±7.5 | ±7.5/±10 | ±7.5/±10 | ±10/±15 | ±10/±15 | ±15/±20 |
| Limit Vacuum Degree(Pa) | 1-100 | 1-100 | 1-100 | 1-100 | 1-100 | 1-100 | 1-100 | 1-100 |
| Pressure rise rate (Pa/h) | 0.67 | 0.67 | 0.67 | 0.67 | 0.67 | 0.67 | 0.67 | 0.67 |
| Heating method | Resistance/induction | Resistance/induction | Resistance/induction | Resistance/induction | Resistance/induction | Resistance/induction | Resistance/induction | Resistance/induction |
Product Tags:
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Door Locking Mode Vacuum Deposition Furnace For Graphite And Semiconductor Devices Images
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